K3530 транзистор чем заменить
Наименование прибора: 2SK3530-01MR
Тип транзистора: MOSFET
Максимальная рассеиваемая мощность (Pd): 70 W
Предельно допустимое напряжение сток-исток |Uds|: 800 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 7 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 7 ns
Выходная емкость (Cd): 105 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.46 Ohm
2SK3530-01MR Datasheet (PDF)
7.1. 2sk3530.pdf Size:114K _fuji
2SK3530-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
7.2. 2sk3530.pdf Size:189K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK3530FEATURESWith TO-220F packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
8.1. 2sk3538.pdf Size:221K _toshiba
2SK3538 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3538 Switching Regulator, DC-DC Converter Applications Unit: mm Low drain-source ON resistance: R = 75 m (typ.) DS (ON) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: I = 100 A (V = 500 V) DSS DS Enhancement-mode: V = 2.0 to 4.0 V (V = 10 V, I = 1 m
8.2. 2sk3539g0l.pdf Size:252K _panasonic
This product complies with the RoHS Directive (EU 2002/95/EC).Silicon MOSFETs (Small Signal)2SK3539GSilicon N-channel MOSFETFor switching Package Features Code High-speed switchingSMini3-F2 Wide frequency band Marking Symbol: 5F Gate protection diode built-in Pin Name1: Gate2: Source Absolute Maximum Ratings Ta = 25C3: DrainParame
8.3. 2sk3539.pdf Size:107K _panasonic
This product complies with the RoHS Directive (EU 2002/95/EC).Silicon MOSFETs (Small Signal)2SK3539Silicon N-channel MOSFETUnit: mmFor switching0.15+0.100.3+0.10.050.03 Features High-speed switching Wide frequency band1 2 Gate protection diode built-in(0.65) (0.65)1.30.12.00.2 Absolute Maximum Ratings Ta = 25C10Parameter Sym
2SK3533-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
FUJI POWER MOSFET2SK3535-01200304Super FAP-G Series N-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsfor SwitchingFoot Print PatternAbsolute Maximum Ratings at Tc=25C( unless otherwise specified)Item Symbol Ratings Unit Remarks Equivalent circuit sche
8.6. 2sk3532.pdf Size:114K _fuji
2SK3532-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]Features TO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
2SK3531-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
2SK3532-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]Features TO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
2SK3537-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesTO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un
2SK3534-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]Features TO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
